Search results for "Quantum confinement effect"
showing 3 items of 3 documents
Synthesis of multi-color luminescent ZnO nanoparticles by ultra-short pulsed laser ablation
2020
Abstract Crystalline ZnO nanoparticles (NPs) are synthesized by ultra-short femtosecond (fs) pulsed laser ablation (PLA) of a zinc plate in deionized water, and are investigated by optical absorption and time resolved luminescence spectra in combination with the morphology and structure analysis. The comparison with previous experiments based on short nanosecond (ns) PLA highlights that pulse duration is a crucial parameter to determine the size and the optical properties of ZnO NPs. While short PLA generates NPs with average size S ‾ of ~ 30 nm, ultrashort PLA allows to achieve much smaller NPs, S ‾ ⩽ 10 nm, that evidence weak quantum confinement effects on both the absorption edge and th…
Room-temperature efficient light detection by amorphous Ge quantum wells
2013
In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%. © 2013 Cosentino et al.
Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices
2015
Quantum confinement in closely packed arrays of Ge quantum dots (QDs) was studied for energy applications. In this work, we report an efficient tuning mechanism of the light harvesting and detection of Ge QDs. Thin films of SiGeO alloys, produced by rf-magnetron sputtering, were annealed at 600 degrees C in N-2 to induce precipitation of small amorphous Ge QDs into the oxide matrix. Varying the Ge content, the QD size was tailored between 2 and 4 nm, as measured by high resolution transmission electron microscopy. X-ray photoelectron spectroscopy (XPS) measurements indicate the formation of pure SiO2, as well as the presence of a sub-stoichiometric Ge oxide shell at the QD interface. Light …